| PART |
Description |
Maker |
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYS64D64020GU-7-B HYS64D64320GU-5-B HYS64D64320GU- |
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 512MB (32Mx72) PC2100 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
184-Pin Unbuffered Dual-In-Line Memory Modules
DDR SDRAM Modules - 256MB (32Mx64) PC2100 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 2-bank
|
Infineon
|
| KM48L16031BT-GLZ_Y_0 KM44L32031BT-GLZ_Y_0 KM416L80 |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70
Enhanced Product 10-Bit Analog-To-Digital Converters W/Serial Control & 11 Analog Inputs 20-SOIC -40 to 125
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70
Quad, Micropower, LinCMOS(TM) Comparator 14-CDIP -55 to 125
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC 0 to 70
Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes
Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70 128MB DDR SDRAM
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-SOIC 128MB DDR SDRAM
Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP 0 to 70 128MB DDR SDRAM
DIODE ZENER SINGLE 500mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-123 3K/REEL 128MB DDR SDRAM
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-SOIC 128MB DDR SDRAM
DIODE ZENER DUAL COMMON-CATHODE 300mW 5.6Vz 5mA-Izt 0.0714 0.1uA-Ir 1 SOT-23 3K/REEL 128MB DDR SDRAM
DIODE ZENER SINGLE 200mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-323 3K/REEL 128MB DDR SDRAM
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-PDIP 128MB DDR SDRAM
DIODE ZENER DUAL COMMON-CATHODE 300mW 51Vz 5mA-Izt 0.0588 0.1uA-Ir 38 SOT-23 3K/REEL 128MB DDR SDRAM
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC 128MB DDR SDRAM
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125 128MB DDR SDRAM
DDR SDRAM Specification Version 1.0 DDR SDRAM的规范版.0
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 128MB DDR SDRAM
128Mb DDR SDRAM 128MB DDR SDRAM
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-PDIP 128MB DDR SDRAM
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC 128MB DDR SDRAM
DDR SDRAM Specification Version 1.0
128Mb DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
http://
|
| HY5DU28422DT-X HYNIXSEMICONDUCTORINC.-HY5DU28822DT |
128Mb-S DDR SDRAM
|
Hynix Semiconductor Inc.
|
| HB54A1288KM-10B HB54A1288KM-A75B HB54A1288KM-B75B |
128MB DDR SDRAM S.O. DIMM
|
Elpida Memory
|
| K4H281638L-LCB3 K4H281638L-LCCC K4H281638L-LCCD |
128Mb L-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H281638D |
128Mb DDR SDRAM Data Sheet
|
Samsung Electronic
|
| HYMD116645AL8 HYMD116645A8 |
16Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
|
| K4H280838F-ULB3 K4H280438F-UC K4H280438F-UCA0 K4H2 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| Z84C00 Z8400 Z0840008VEC Z0840006VEC |
NMOS/CMOS Z80 CPU CENTRAL PROCESSING UNIT
MEMORY, SDRAM, DDR, 128MB, 8MX16, TSOP-66
Microprocessor
|
Zilog.
|
| HYS72D16500GR-7-A HYS72D32501GR-8-A |
256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 128MB (16Mx72) PC2100 1-bank
|
Infineon
|
| HYMD116725B8J HYMD116725B8J-J HYMD116725BL8J-J |
16Mx72|2.5V|J|x9|DDR SDRAM - Unbuffered DIMM 128MB
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
